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| 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltageblocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251 type and the typical equivalent product is 1N60A. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 2.12mm*2.02mm. Chip Thickness: 30020m. Top metal: Al, Backside Metal: Ag. PAD1:GATE PAD3:SOURCE 1 3 CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TO-251 Package) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg Ratings 600 30 1.0 28 -55+150 -55+150 Unit V V A W C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward On Voltage Symbol BVDSS VTH IDSS RDS(on) IGSS VFSD Test conditions VGS=0V, ID=250A VGS= VDS, ID=250A VDS=600V, VGS=0V VGS=10V, ID=0.5A VGS=30V, VDS=0V IS=1.0A, VGS=0V Min 600 2.0 Typ 8.1 Max 4.0 1.0 8.5 100 1.4 Unit V V A nA V HANGZHOU MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.08.23 Page 1 of 1 |
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